Magnetic tunnel junction for nonvolatile CMOS logic

Abstract

Magnetic tunnel junction (MTJ) device, a nonvolatile spintronic device, is capable of fast-read/write with high endurance together with back-end-of-the-line (BEOL) compatibility, offering a possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also low-power high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing MTJs with CMOS circuits are discussed and the current status of the MTJ technology is presented along with its prospect and remaining challenges.