IEEE Transactions on Magnetics · 2007 · 54 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsNanotechnologyFerromagnetic MaterialsMagnetic NanomaterialsMagnetic OxidesMagnetic Properties Of SolidsSpintronic MaterialsSpintronicsCurrent DensityJoule HeatingMagnetoresistanceNanomagnetismSpin ValvesSpin-dependent ScatteringTunnel MagnetoresistanceTunneling Magnetoresistance
We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Omegamum2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact
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Domain Wall Scattering Explains 300% Ballistic Magnetoconductance of Nanocontacts
Gen Tatara, Yibing Zhao, M. Muñoz et al. · Physical Review Letters · 1999 · 208 citations