Comparative study of encapsulated solution-processed zinc oxide ultraviolet photodetectors with different contacts

Abstract

Ultraviolet (UV) photodetectors were fabricated with low temperature (<150 °C) solution-processed zinc oxide (ZnO) layers. A polydimethylsiloxane (PDMS) layer was used as the encapsulation to protect the devices from ambient effects. Current–voltage (I–V) characteristics, transient characteristics, and the encapsulation effect were compared for ohmic and Schottky contact devices that were formed with aluminum and silver electrodes, respectively. Schottky contact devices were shown to be able to achieve rapid response with the recovery time not affected by the encapsulation.