InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors

Abstract

Traveling-wave electroabsorption modulators for operation at 1.55 μm have been designed and fabricated. Devices of different lengths were characterized. Modulators with integrated termination resistors showed wide modulation bandwidths and excellent bandwidth-length products. A bandwidth of 43 GHz was measured for a 450-μm-long device, which corresponds to a 19.3-GHz/spl middot/mm bandwidth length product. For a device length of 250 μm, a bandwidth of 67 GHz is extrapolated from measurements up to 45 GHz.