Comparative Study of Radiation Hardness of Optoelectronic Components for the CMS Tracker Optical Links

Abstract

Commercially available semiconductor lasers and p-i-n photodiodes from several different manufacturers have been irradiated with 6MeV neutrons to fluences up to 10 15 n/cm 2 . A comparison of the radiation damage in the lasers is made in terms of the threshold current increase and efficiency loss. In the irradiated p-i-n photodiodes, the damage to leakage current and responsivity is compared. The laser damage was similar overall after normalising the changes with respect to the preirradiation values. The p-i-n photodiodes had similar leakage current increases overall. The detectors that were frontilluminated are more radiation resistant than the backilluminated devices in terms of the photocurrent damage.