New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

TLDR

Existing MOSFET models for 0.18 µm and 0.13 µm technology nodes with effective lengths down to 70 nm are available online. The study introduces a predictive MOSFET and interconnect modeling paradigm that delivers SPICE‑compatible parameters for future technology generations. Designers can input node‑specific parameters such as L_eff, T_ox, V_t, R_dsw and interconnect dimensions to instantly generate a BSIM3v3‑based model, with its accuracy verified against published data and 2D simulations.

Abstract

A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.