Electroluminescence in n‐ZnO Nanorod Arrays Vertically Grown on p‐GaN

Abstract

Electroluminescent (EL) devices (see Figure) have been fabricated using n‐ZnO nanorod arrays grown on p‐GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p–n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse‐bias voltage of 3 V.