Preparation of Aluminum‐Doped Zinc Oxide Films by a Normal‐Pressure CVD Method

Abstract

Aluminum‐doped zinc oxide films prepared using a normal‐pressure CVD (NP‐CVD) method were studied as a transparent electrode material. The films were prepared on fused quartz substrates at 500°C using bis(2,4‐pentanedionato)zinc and tris(2,4‐pentanedionato)aluminum as source material. The transparent films, ∼0.3 μm in thickness, with a transmittance above 80% at a wavelength between 400 and 820 nm, were easily obtained. The optical band gap of the films increased from 3.3 to 3.6 eV with increasing amounts of aluminum dopant. The minimum resistivity of the film was about 4.9 × 10 −5 Ω·m.