2004 · 18 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIon ImplantationWide-bandgap Semiconductor DevicesBreakdown VoltageJunction BreakdownLow-energy Ion ImplantationResistance Reduction Techniques
We propose new low-voltage UMOSFETs with superjunction (SJ) structures to achieve ultra-low on-resistance. The present SJ structure has been formed by multiple boron ion implantations with varied energies up to 2 MeV. This technique enabled us to obtain p-columns with flat sidewalls, which minimize the interference to the drift conduction. The SJ diodes have clearly indicated the breakdown voltage enhancement, as expected, from the SJ characteristics. Drastic on-resistance reduction was demonstrated for the SJ-UMOSFETs with a breakdown voltage of 78 V.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13