Domain switching measurements in an antiferromagnet

Abstract

The magnetoelectric effect has been used to observe the domain state of antiferromagnetic chromium oxide single crystals during domain reversal. Switching times have been accurately measured as a function of applied fields for two samples, one highly strained, one relatively strain free. The temperature dependence of the domain switching threshold fields has been measured for temperatures close to the Néel point, and a simple model is presented to explain the results obtained.