The effects of hydrogen dilution on structure of Si:H thin films deposited by PECVD

Abstract

Si:H thin films were deposited using PECVD method at substrate temperature of 250°C with different hydrogen dilution. Structure investigations and hydrogen concentration estimation were performed using FTIR, Raman and UV-VIS spectroscopy. The IR and Raman spectra show various peak shifting when H dilution is changed. Band gaps of films were evaluated from the strong absorption regions in UV-VIS transmission spectra. The results demonstrate a transition from amorphous to nc/μc structure when hydrogen dilution increased.