Publication | Closed Access
All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing
136
Citations
26
References
2009
Year
EngineeringColloidal NanocrystalsOptoelectronic DevicesChemistryLuminescence PropertySemiconductorsChemical EngineeringElectronic DevicesPhotodetectorsQuantum DotsMaximum El BrightnessCompound SemiconductorPhotoluminescenceNanotechnologyAll-inorganic Light-emitting DevicesOptoelectronic MaterialsWet-chemical ProcessingSol–gel Synthetic RoutesNanomaterialsApplied PhysicsQuantum Photonic DeviceOptoelectronics
The fabrication and characterisation of solution-processed, all-inorganic light-emitting devices incorporating colloidal CdSe/ZnS quantum dots are presented. Using sol–gel synthetic routes, highly luminescent core–shell QDs are embedded between spin-coated p-type NiO and n-type ZnO charge-transport layers. The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 249 cd m−2.
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