Publication | Open Access
Indium contamination from the indium–tin–oxide electrode in polymer light-emitting diodes
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Citations
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References
1996
Year
EngineeringOptoelectronic DevicesChemistryLuminescence PropertyElectronic DevicesIndium ContaminationLight-emitting DiodesMaterials ScienceElectrical EngineeringPolymer Light-emitting DiodesPhotoluminescenceOptoelectronic MaterialsNew Lighting TechnologyMetal ImpuritiesWhite OledSolid-state LightingApplied PhysicsElectroluminescence SpectrumOptoelectronics
We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS) depth profiling data corroborate this result. An average indium concentration of 5×1019atoms/cm3 originating from the indium–tin–oxide (ITO) electrode has been found in the polymer layer.
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