11E-3 A Thermally Stable CMOS Oscillator Using Temperature Compensated FBAR

Abstract

This paper presents a passively temperature compensated CMOS oscillator utilizing Film Bulk Acoustic Resonator (FBAR). The resonator exhibiting f-Q product of 2~3times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> sec <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> is comprised of molybdenum (Mo), aluminum nitride (AlN), and a compensation material that has positive temperature coefficient of Young's modulus. The 600 MHz oscillator consumes 6.6 mW from a 3.3 V supply and achieves an excellent phase noise performance of -102 dBc/Hz, -132 dBc/Hz, and -151 dBc/Hz at 1 kHz, 10 kHz, and 100 kHz carrier offset, respectively. The oscillator's temperature-dependent frequency drift is less than 80 parts per million (ppm) over a temperature range of -35 to +85degC.