Effect of InxGa1−xAs (0⩽x⩽0.4) capping layer on self-assembled 1.3μm wavelength InAs/GaAs quantum islands - Concepedia

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Effect of InxGa1−xAs (0⩽x⩽0.4) capping layer on self-assembled 1.3μm wavelength InAs/GaAs quantum islands

13

Citations

12

References

2001

Year

X.D. Wang, Zhichuan Niu, Shipeng Feng, Zhiguo Miao

Journal of Crystal Growth

SemiconductorsElectrical EngineeringEngineeringApplied PhysicsSelf-assembled 1.3μMOptoelectronic DevicesOptoelectronicsCompound SemiconductorSemiconductor Nanostructures

References

	Year	Citations

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