Dielectric Properties of Ultra‐Low Sintering Temperature Al ₂ O ₃ – <scp>BBSZ</scp> Glass Composite

Abstract

Ceramic composites of B 2 O 3 –Bi 2 O 3 –SiO 2 –ZnO ( BBSZ ) glass mixed with Al 2 O 3 (10–50 vol%) were sintered at 450°C, and their microstructural and dielectric properties investigated. Dense structures were obtained when the Al 2 O 3 content was lower than 30 vol%. Raman, XRD, and FESEM showed the existence of a secondary phase, Bi 24 Si 2 O 40 , in all samples. The dielectric properties of the composite with 30 vol% addition of Al 2 O 3 showed good dielectric properties with ε r of 14.8 and 20.8 and 32.5 at 100 kHz and 100 MHz and 1 GHz, respectively. The tanδ values at the same frequencies were 0.004 and 0.006 and 0.016. The results show that BBSZ glass with different amounts of Al 2 O 3 exhibit widely applicable relative permittivity values and affordable loss and are thus promising candidates for ultra‐low sintering temperature applications.