Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge Heterojunctions

Abstract

Epitaxial films of and have been deposited on , , and Ge substrates by a vapor phase chemical reaction technique. The growth variables, such as source temperature, seed temperature, crystal orientation, surface preparation, and gas flow rate, have been investigated. The optimum conditions for the growth of epitaxial films and the electrical characteristics of these films are reported. junctions grown by a solution growth technique (TSM) are abrupt, whereas junctions grown by the vapor phase technique are graded. Detailed measurements of the I–V characteristics and capacitance of , , and abrupt heterojunctions are interpreted in terms of Anderson's model. Kinks in the I–V characteristic are explained by discontinuities in the valence and conduction bands.