Bipolar resistance switching in chalcogenide materials

Abstract

Abstract The paper reports on an investigation of two chalcogenide films that both show bipolar resistance switching, i.e ., Ag/Ge 0.25 Se 0.75 and Ge 2 Sb 3 Te 5 . Changes occurring in the chalcogenide films during switching were analyzed by conductive‐atomic force microscopy (C‐AFM). All the findings in the first Ag/Ge 0.25 Se 0.75 family are in agreement with the proposal of a migration of Ag from the electrode throughout the film, creating random conductive paths when a bias is applied and their rupture when the bias is reversed. Reversible bipolar resistance switching with bias in the range of few volts was clearly demonstrated in Ge 2 Sb 3 Te 5 films, even though its nature is not so well understood. Clear enough is the fact that a primary and irreversible contraction of the film along with an increase in its conductivity occurred when a bias was applied to the film. It was related to a crystallization of the film. Further write/erase cycles induced resistance switching but no change in the contraction/expansion of the films. Our findings corroborated a mechanism where an amorphous Sb‐rich phase would exist in between Ge 2 Sb 2 Te 5 crystallites. This would create conductive paths when a bias is applied, paths that would break when the polarity is reversed.