Thermoelectric properties of n‐type Mg₂Si_{0.6–<i>y</i>}Sb<i>_y</i> Sn_0.4 compounds

Abstract

Abstract The thermoelectric properties of n‐type Mg 2 Si 0.6– y Sb y Sn 0.4 solid solutions with a small Sb‐doping ratio on the Si‐site ( y = 0.0–0.015) were prepared by an induction melting/hot‐pressing method. The electrical conductivity, Seebeck coefficient and thermal conductivity have been measured as a function of temperature from 300 K to 820 K. A power factor ∼2.28 × 10 –3 Wm –1 K –2 at 574 K for y = 0.01, and a dimensionless figure of merit ZT ∼0.68 at 724 K for y = 0.005 are attained. Given the potential of these materials for utilization in thermoelectric devices in a medium temperature range, the thermoelectric compatibility of Mg 2 Si 0.6– y Sb y Sn 0.4 samples has been also addressed. (© 2008 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)