Publication | Closed Access
BN‐Enabled Epitaxy of Pb<sub>1–<i>x</i></sub>Sn<i><sub>x</sub></i>Se Nanoplates on SiO<sub>2</sub>/Si for High‐Performance Mid‐Infrared Detection
48
Citations
42
References
2015
Year
EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductor NanostructuresSemiconductorsElectronic DevicesHigh‐performance Mid‐infrared DetectionMolecular CrystalsMolecular Beam EpitaxyEpitaxial GrowthMaterials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor MaterialFew-layer BoronElectronic MaterialsApplied PhysicsLayered Materials
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).
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