300A 650V 70 um thin IGBTs with double-sided cooling

Abstract

Large IGBTs with a current rating of 300A and a blocking voltage of 650V on ultra thin wafers have been successfully developed with double-sided cooling capability. The deposition of solderable metals on the front and back sides of the IGBT produced flat thin wafers with less than 2 mm warpage and good mechanical yield. A large reduction of on-state voltage drop 390 mV at 300A is achieved in a wirebond-less Cu-clip package. The combination of lower on-state voltage drop and larger heat exchange area increases the IGBT current carrying capability by 200%.