A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies

Abstract

This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over −10 ∼ 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10µsec to 1.6msec. This approach is not restricted by forward junction bias (∼0.7V) of conventional BJTs and diodes.