Reduction of damping in high-speed semiconductor lasers

Abstract

An analytical expression for the intrinsic gain suppression factor based on carrier heating is derived. The theory shows good agreement with the published experimental value of in =+1.5*10/sup -17/ cm/sup 3/ for in-plane lasers. For the first time, a negative gain suppression factor for particular laser designs is predicted and experimentally observed. A negative gain suppression factor can lead to the elimination of damping in semiconductor lasers. Using vertical-cavity surface-emitting lasers, a negative gain suppression factor of -2.2*10/sup -17/ cm/sup 3/ is observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>