Exact analysis of a simple class E circuit version for device characterization purposes

Abstract

The mathematical exact analysis of a simple class E high-efficiency switching mode tuned power amplifier is performed. The simple network only contains one capacitor and one inductor. Switch duty-cycle and Q cannot be chosen independently, and thus this circuit is only of interest for applications in which a high harmonic content in the load is permitted. In this paper, this circuit is used as a test bench for extracting, with no need for optimization, the parameters of a simple FET output port model in high frequency switching conditions. This method is a quick way to predict if a transistor will be useful in a class E application. Experimental measurements showing good agreement with theoretical results are presented.