Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays

Abstract

We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line selector MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.