Publication | Closed Access
A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses
46
Citations
7
References
2002
Year
Unknown Venue
Electrical EngineeringIndustrial ElectronicsEngineeringSemiconductor DevicePower DeviceElectronic EngineeringPower Semiconductor DevicePower Electronics ConverterSnubber CircuitEmi Noise LevelPower InverterPower ElectronicsSwitching LossesMicroelectronicsEmi NoiseIgbt Devices
In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt, di/dt, surge voltage and also switching losses are reduced. This scheme can also eliminate a snubber circuit from the inverter system. From experimental tests, the EMI noise level is reduced by more than 15 dBuV/m as compared with conventional systems.
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