Solution‐Crystallized Organic Field‐Effect Transistors with Charge‐Acceptor Layers: High‐Mobility and Low‐Threshold‐Voltage Operation in Air

Abstract

High-mobility solution-processed organic transistors are developed based on a hybrid of solution-crystallized air-stable organic semiconductor 2,7-dioctyl[1]ben­zo­thieno[3,2-b][1] benzothiophene (C8-­ BTBT) and 2,3,5,6-tetrafluoro-7,7,8,8-tetra­cy­anoquinodimethane (F4-TCNQ) top layers. Charge mobility as high as 6 cm2/Vs is achieved, owing to the almost perfectly periodic crystal packing and efficient charge supply from the acceptor.