High linearity 1-ohm RF switches with phase-change materials

Abstract

We report GeTe-based phase change material RF switches with on-state resistance of 1 ohm and ultra-low loss and highest linearity amongst PCM RF switches. The lowest on-state resistance is 0.06 Ω·mm, which is about 20 times lower than state-of-the-art FET switches. The PCM RF switches are fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. With on-state resistance of 1 ohm, RF insertion loss is measured less than 0.2 dB. With P1dB > 2 W, the harmonic powers are suppressed greatly up to 1 W RF power at 700 MHz.