A new efficient one-dimensional analysis program for junction device modeling

Abstract

A new program for one-dimensional semiconductor device analysis is described and shown to be more general and more efficient than competitive methods. Numerical results from a study of high-frequency bipolar transistors are given with emphasis on the effect of Fermi statistics and velocity limitation in high-current density situations. A method for device modeling directly from the partial differential equation (PDE) solutions is described, and applied to the problem of simulating the performance of high-speed emitter-coupled logic circuits.