Double gate MOS device having IGBT and MCT performances

Abstract

A new MOS-bipolar device having IGBT and MCT performances is described. The double gate MOS (DGMOS) can operate at a thyristor action in the on-state and a bipolar transistor action in the turn-off transient state by applying gate signal to two MOS gate electrodes. This new device exhibits very good performance with the almost same low forward voltage drop as a conventional thyristor and the almost same turn-off characteristics as a fast IGBT. This paper reports the new device concept and the results of numerical simulation of its perkormances using two dimensional numerical simulation.