IEEE Transactions on Microwave Theory and Techniques · 2005 · 53 citations · 15 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsClass F AmplifiersClass F Power AmplifiersHigh-efficiency Power AmplifiersPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
Two inverse class-F power amplifiers (PAs) working at 1 and 1.8 GHz, respectively, have been developed. The PAs use an LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1-GHz PA achieved a drain efficiency of 77.8% with 12.4 W of output power and the 1.8-GHz PA a drain efficiency of 60% with 13 W of output power. To our knowledge, these results represent the highest efficiency and output power for an inverse class-F PA based on a single LDMOS transistor working at these frequencies.
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