FTIR In Situ Studies of the Gas Phase Reactions in Chemical Vapor Deposition of SiC

Abstract

The gas phase during the chemical vapor deposition of silicon carbide from has been investigated by means of FTIR spectroscopy in the in situ conditions. Results show the formation of and molecules which are the transition products in the deposition process, according to earlier suppositions. The gas phase reaction induced by small amounts of (or ) in the system is an autocatalytic one. The mechanism of surface reactions is proposed. The importance of gas phase analysis in the deposition process is indicated.