Synthesis, Characterization, and Non‐Volatile Memory Device Application of an N‐Substituted Heteroacene

Abstract

N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.