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High power, high efficiency E-band GaN amplifier MMICs
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2012
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Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPower DeviceAluminum Gallium NitrideHigh PowerOutput PowerGan Power DevicePower ElectronicsAdvanced High PowerOptoelectronicsPower Amplifier Designs
An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author's knowledge, these power amplifier designs demonstrate performance beyond previously published results for E-band power amplifier MMICs.