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High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

Materials EngineeringMaterials ScienceAluminium NitrideHigh Quality GanEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceMultilayer HeterostructuresComposition-graded Alxga1−xn Interlayers