High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

X-ray diffraction of III-nitrides

M. A. Moram, M. E. Vickers · Reports on Progress in Physics · 2009 · 1.1K citations

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GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 296 citations

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Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)

S. Tripathy, S. J. Chua, P. Chen et al. · Journal of Applied Physics · 2002 · 287 citations

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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 271 citations

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Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

H. Marchand, Lingyan Zhao, N. Zhang et al. · Journal of Applied Physics · 2001 · 181 citations

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