A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process

Abstract

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P/sub 1dB/. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes.