2002 · 16 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsSwitching TechniquesCmos Analog Integrated CircuitsCmos Fabrication ProcessesCmos Radio-frequency CircuitsInsertion LossInsertion Loss ReductionRf Cmos DesignRf SwitchesSubstrate Effects
A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P/sub 1dB/. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes.
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