Bloch line stabilization in stripe domain wall for Bloch line memory

Abstract

The construction of bit positions for a pair of vertical Bloch lines (VBLs) in the Bloch line memory is discussed, in terms of VBL interaction with in-plane magnetic field, providing Bloch lines are propagated by gyrotropic force. Propagation margin for a pair of VBLs is predicted from the threshold viewpoint for pulsed bias field and its width. Experimentally, ion implantation into the garnet surface layer or pattern made by non-magnetic material, Cr, with large internal stress were confirmed to be effective in making bit positions for VBL propagation. The magnetostatic effect, however, was not found to be suitable for controlling VBL motion.