Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFETs and HEMTs

Abstract

A novel method of extracting the parasitic resistance and inductance values for MESFETs, and high electron mobility transistors (HEMTs) is presented. The technique requires the use of only RF two-port measurement data, is extremely accurate, straightforward to implement and works equally well for both MESFETs and HEMTs. The technique makes use of cold-chip measurements in conjunction with a unique analysis that has proved to be both fast and robust. The method does not require that channel resistance or diode resistance be evaluated or that excessive values of gate current be used in the measurements.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>