2002 · 16 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMemory DevicesMemory Subsystem DesignSemiconductor Thin FilmsGate Dielectric EngineeringHigh-density Memory MaterialsMemory Circuit DesignNon-volatile Memory DesignProcess SpecificationProcess Technology Selection
In this paper, we present a giga bit density DRAM technology based on the state-of-the-art technologies. A DRAM with 1 giga bit density design rule is fabricated featuring Shallow Trench Isolation (STI), TiSi/sub x/ gate, Self-Aligned Contact (SAG), and simple stack capacitor cell using (Ba,Sr)TiO/sub 3/ (BST) as a dielectric material. A reliable and highly manufacturable process is established which satisfies the stringent requirement for the next generation memory devices such as 1 Gbit DRAM and beyond.