2006 IEEE Nuclear Science Symposium Conference Record · 2006 · 10 citations · 14 references
EngineeringElectrical EngineeringElectronic MaterialsRadiation DetectionSemiconductor DevicesDetector TechnologyPhotodetectorsRadiation DetectorsSemiconductor DetectorsContact InstabilityCurrent-voltage RelationsDetector BiasingPotential - Current CharacteristicsSchottky BarriersTemperature DependenceTemperature Dependence MeasurementTime-dependent Stability
High energy-resolution CdTe radiation detectors with Schottky contact show instability with operating time under bias voltage, which is termed as polarization phenomenon. Time stability is one of the important factors for its practical applications. It is considered that this phenomenon is responsible for the deep acceptor level in CdTe bulk. However, the energy position and concentration of the deep acceptor level have been not estimated accurately. We have studied the polarization phenomenon and the parameters of deep acceptor in a Schottky-type CdTe radiation detector. In this paper, we propose a new method which can quantitatively evaluate the parameters of the deep acceptor such as concentration and energy level by measuring the temperature dependence of the current-voltage characteristics of the CdTe radiation detector.
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The physics of semiconductor devices
H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations
Rebekah Hill · Physics Bulletin · 1975 · 432 citations
Polarization in Cadmium Telluride Nuclear Radiation Detectors
P. Siffert, JA Berger, C. Scharager et al. · IEEE Transactions on Nuclear Science · 1976 · 147 citations
Natural Sciences, Materials Science, Nuclear Engineering +14
High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy
Tadayuki Takahashi, Biswajit Paul, Kazuyuki Hirose et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1999 · 145 citations · Full text
Natural Sciences, Electrical Engineering, Materials Science +12