IEEE Journal of Solid-State Circuits · 1977 · 16 citations · 8 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesAnalog FiltersAnalog Integrated CircuitsCharge-coupled DevicesCmos Circuit DesignLow-noise Circuit DesignMixed-signal Integrated Circuit DesignCharge DetectionCmos Analog Integrated CircuitsCmos Operational AmplifiersLow-pass Filter ResponseLow-pass FilteringLow-pass FiltersOperational Transconductance AmplifiersSense Amplifier Design
Self-contained single-chip charge-coupled split-electrode filters with 55 taps and a novel channel structure have been built with a double-level polysilicon NMOS process. Operating at a sample rate of 32 kHz, these devices provide a low-pass filter function with a passband from 0 to 3.2 kHz and a stopband above 4 kHz. The image charge on the sense electrodes is detected with a novel sensing circuit employing two on-chip operational amplifiers, one of which suppresses the common-mode signal on the two sense buses while the other one integrates the difference signal. In addition, the chips carry antialiasing prefilters, a correlated double sample-and-hold circuit to minimize reset noise and to restore the output signal, and all the necessary peripheral logic and biasing circuitry so that the devices can be operated from a single master clock and two power supplies of +12 and -5 V, respectively.
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EBES: A practical electron lithographic system
D. R. Herriott, R.J. Collier, D. S. Alles et al. · IEEE Transactions on Electron Devices · 1975 · 126 citations
Engineering, Electrical Engineering, Manufacturing Engineering +16
Transversal filtering using charge-transfer devices
D.D. Buss, D.R. Collins, William H. Bailey et al. · IEEE Journal of Solid-State Circuits · 1973 · 119 citations