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Diffraction studies of the high pressure phases of GaAs and GaP
110
Citations
19
References
1982
Year
X-ray CrystallographyEngineeringElectron DiffractionPlanar DefectsSynchrotron Radiation SourceDiffraction StudiesQuantum MaterialsMaterials ScienceCrystalline DefectsPhysicsHigh Pressure PhasesSemiconductor MaterialSynchrotron RadiationSpace Group FmmmNatural SciencesX-ray DiffractionApplied PhysicsCondensed Matter PhysicsShear Stresses
High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive x-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172±7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal β-Sn type phase at 215±8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.
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