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A 360$^{\circ}$ BST Phase Shifter With Moderate Bias Voltage at 30 GHz
55
Citations
14
References
2007
Year
Materials ScienceElectrical EngineeringInsertion LossEngineeringHigh-frequency DeviceMicrowave TransmissionApplied PhysicsBst Phase ShifterVoltage-controlled TunabilityMicrowave MeasurementThin FilmsMicroelectronicsMicrowave EngineeringOptoelectronicsElectrical PropertyModerate Bias Voltage
Paraelectric BaSrTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> films deposited by sol-gel have been investigated from 1 kHz to 40 GHz using coplanar waveguides, resonators, and inter-digitated capacitances. At room temperature and without bias, the dielectric constant epsiv <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> is around 300 and the loss tangent is 5times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Tunability is 40% for a 40-V bias voltage. Analog phase-shifter circuits were subsequently fabricated in order to obtain a 360deg phase shift in the Ka-band with a moderate bias voltage. The lowest bias value was 17 V at 40 GHz, whereas 40 V were necessary at 30 GHz. For the latter condition, the insertion loss was -6dB. The best figure-of-merit of the phase shifters with a loading factor of 1.4 was 27deg/dB. These results show an improvement in terms of voltage-controlled tunability
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