Microchip‐sized InSb photodiode infrared sensors operating at room temperature

Abstract

A novel microchip-sized InSb photodiode infrared sensor (InSb PDS) operating at room temperature is reported. There is no power consumption on the InSb PDS itself, since it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 µV/Hz1/2. A detectivity (D*) of 2.8x108 cmHz1/2/W has been obtained at 300 K. The InSb PDS is finally molded with plastic on a Quad Flat Non-leaded (QFN) package, having performance high enough for applications such as mobile electronic equipments, personal computers and consumer electronics. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)