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Green Emission from Tb-Doped GaN Grown by MOVPE
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1999
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Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesTb3+ 5D4EngineeringPhotoluminescenceOptoelectronic MaterialsApplied PhysicsTb SourceGan Power DeviceTb-doped Gan GrownCategoryiii-v SemiconductorTb-doped Gan LayersOptoelectronicsCompound Semiconductor
Tb-doped GaN layers have been grown by metalorganic vapor phase epitaxy using tris-(dipivaloylmethanato)-terbium as a Tb source. Photoluminescence measurements have revealed characteristic emission bands associated with Tb3+ 5D4 → 7F (J = 3 to 6) transitions at around 1.98, 2.10, 2.28 and 2.54 eV. Each band consists of several sharp emission lines of full width at half maximum typically ranging from 1 to 3 meV at 24 K. In addition to the Tb-related emission, the donor–acceptor pair (DAP) emission is observed at 3.27 eV, which may originate from the unintentionally incorporated carbon, oxygen and silicon.