Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Abstract

Nanowire growth: Catalyst-free growth of GaN nanowires on Si substrates (see image) is investigated by high-resolution transmission electron microscopy. Small GaN crystalline clusters are found on top of an interface amorphous layer. High-crystalline-quality vertical nanowires are grown on an amorphous oxide layer. These findings open new possibilities for nanowire growth on a variety of nonconventional substrates.