Integrated Schottky Structures for Applications Above 100 GHz

Byron Alderman, Hosh Sanghera, B. Thomas, D. N. Matheson, A. Maestrini, Hui Wang, J. Treuttel, José V. Siles, Steve Davies, Tapani Närhi

2008 · 12 citations · 2 references

Concepts

Abstract

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

References

2