Direct Measurement of SET Pulse Widths in 0.2-$\mu$m SOI Logic Cells Irradiated by Heavy Ions

Abstract

Heavy-ion-induced SET-pulse widths in NOR-logic cells fabricated by a 0.2-mum FD-SOI technology are directly measured by using an on-chip self-triggering flip-flop circuit. The pulse widths are distributed from 0.3 to 1.0 ns under a constant LET of 40 MeVmiddot cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /mg