Monolithic sampling head IC

Abstract

A monolithic sampling head IC composed of a resonant tunneling diode (RTD) for the sampling pulse generator and Schottky barrier diodes for the sampling bridge has been developed. The RTD was made using an In/sub 0.53/Ga/sub 0.47/As-AlAs structure (pseudomorphic strained superlattice). For this type of high switching voltage RTD, a peak-to-valley ratio (P/V ratio) of 9 at 202 degrees C peak-to-peak switching voltages of 1.5 V or more at room temperature were achieved. The Schottky barrier diodes were made from an (In/sub 0.53/Ga/sub 0.47/As)/sub 0.5/(In/sub 0.52/Al/sub 0.48/As)/sub 0.5/ compound. A frequency bandwidth of at least 26 GHz was obtained. When attempting to use a quantum effect device (such as an RTD) in a practical application, the most important factor to consider is its reliability. Good results were achieved in an endurance test of this device, in which it was made to continuously oscillate between 600 MHz to 1 GHz at 90 degrees C for more than 1000 h.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>