Electrochemical and Solid-State Letters · 2008 · 33 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor NanomaterialsGallium Nitride Light-emitting DiodesLight ExtractionLight Extraction EfficiencyLight IntensitySurface ExtractionVertical Light-emitting DiodesWafer-to-wafer BondingZinc Oxide Nanostructures
Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.
16
Thermal Conductivity of Silicon from 300 to 1400°K
H. R. Shanks, Paul D. Maycock, P. H. Sidles et al. · Physical Review · 1963 · 541 citations
AlGaN/GaN quantum well ultraviolet light emitting diodes
Jung Han, Mary H. Crawford, R. J. Shul et al. · Applied Physics Letters · 1998 · 252 citations
Engineering, Electrical Engineering, Materials Engineering +17